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| savantic semiconductor product specification silicon npn power transistors 2SD2331 d escription with to-3pfa package high voltage;high speed built-in damper diode applications for color tv horizontal output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage 5 v i c collector current 3.5 a i b base current 1 a p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD2331 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter- base breakdown voltage i e =200ma , i c =0 5 v v cesat collector-emitter saturation voltage i c =3a; i b =0.8a 3.0 5.0 v v besat base-emitter saturation voltage i c =3a ;i b =0.8a 1.5 v i cbo collector cut-off current v cb =800v i e =0 10 a h fe dc current gain i c =0.5a ; v ce =5v 8 f t transition frequency i c =0.1a ; v ce =10v 3 mhz v f diode forward voltage i f =3.5a 2.0 v savantic semiconductor product specification 3 silicon npn power transistors 2SD2331 package outline fig.2 outline dimensions (unindicated tolerance: 0.30mm) |
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